Datasheet4U Logo Datasheet4U.com

2SC3680 Silicon NPN Power Transistors

2SC3680 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variation.

2SC3680 Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 7 A ICM Col

📥 Download Datasheet

Preview of 2SC3680 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC3680
Manufacturer
Inchange Semiconductor
File Size
199.24 KB
Datasheet
2SC3680_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

📁 Related Datasheet

  • 2SC3685 - NPN Transistor (Sanyo Semicon Device)
  • 2SC3686 - NPN Transistor (Sanyo Semicon Device)
  • 2SC3687 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3688 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3689 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3600 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3601 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3603 - NPN EPITAXIAL SILICON TRANSISTOR (NEC)

📌 All Tags

Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SC3680-like datasheet