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2SC3680 - Silicon NPN Power Transistors

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Part number 2SC3680
Manufacturer Inchange Semiconductor
File Size 199.24 KB
Description Silicon NPN Power Transistors
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High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuo

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