* Fast speed (tf typ=100ns).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3686] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collec
2SC3686
Sanyo Semicon Device
90.94 KB
Npn transistor.
Ordering number:EN1938A
NPN Triple Diffused Planar Silicon Transistor
2SC3686
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
📁 Related Datasheet
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Symbol VCBO VCEO VEBO IC.
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