* Fast speed (tf typ=100ns).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process).
* Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage
2SC3687
Sanyo Semicon Device
112.54 KB
Npn triple diffused planar silicon transistor.
Ordering number:EN1939B
NPN Triple Diffused Planar Silicon Transistor
2SC3687
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicat.
📁 Related Datasheet
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Symbol VCBO VCEO VEBO IC.
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Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
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