* Small Cob (Cob=1.5pF).
* Ultrasmall-sized package permitting 2SC3689-used sets to be made smaller, slimmer.
* Adoption of MBIT process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VE
2SC3689
Sanyo Semicon Device
40.82 KB
Npn epitaxial planar silicon transistor.
Ordering number : EN1855B 2SC3689 SANYO Semiconductors DATA SHEET 2SC3689 NPN Epitaxial Planar Silicon Transistor High-hFE, Low-Frequency General-.
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