* Fast speed (t f=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process).
* Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Bas
2SC3688
Sanyo Semicon Device
169.80 KB
Npn triple diffused planar silicon transistor.
Ordering number:EN1940B NPN Triple Diffused Planar Silicon Transistor 2SC3688 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicat.
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