C3930 Datasheet | Specifications & PDF Download

MSC3930−BT1 Preferred Device NPN RF Amplifier Transistor • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 Symbol V(BR)CBO V(BR)CEO V(BR)

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Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High transition frequency fT.  Optimum for RF amplification of Pb Lead

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Transistors 2SC3930 Silicon NPN epitaxial planar type (0.425) For high-frequency amplification Complementary to 2SA1532 0.3+–00..01 Unit: mm 0.15+

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Transistors 2SC3930 Silicon NPN epitaxial planar type (0.425) For high-frequency amplification Complementary to 2SA1532 0.3+–00..01 Unit: mm 0.15+

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SMD Type Silicon NPN Epitaxial Planar 2SC3930 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Transistors IC 1

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Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3930G Silicon NPN epitaxial planar type For high-frequency amplifica

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MIC39300/39301 Micrel MIC39300/39301 3A Low-Voltage Low-Dropout Regulator General Description The MIC39300 and MIC39301 are 3.0A low-dropout linear

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2SC3930 Elektronische Bauelemente 0.03A , 30V NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lea

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2SC3930 TRANSISTOR (NPN) SOT-323 FEATURES z For high-frequency Amplification Complementary to 2SA1532 z Optimum for RF amplification of FM/AM radios z

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MIC39300/39301 Micrel MIC39300/39301 3A Low-Voltage Low-Dropout Regulator General Description The MIC39300 and MIC39301 are 3.0A low-dropout linear

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www.DataSheet4U.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSIST

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