C398 Datasheet | Specifications & PDF Download

Ordering number:EN2232B NPN Triple Diffused Planar Silicon Transistor 2SC3988 500V/25A Switching Regulator Applications Features · High breakdown vo

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Ordering number:ENN2221B NPN Planar Silicon Darlington Transistor 2SC3987 Driver Applications www.datasheet4u.com Applications · Suitable for use i

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Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 20.0±0.5 Unit: mm φ 3.3

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 800V RDS(on) (max) 380 IDSS (min) 20mA Package SOT-23 Features • High Breakdown Voltage: 800V •

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3988 DESCRIPTION ·With TO-3PN package ·High brea

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Ordering number:EN2220B NPN Planar Silicon Darlington Transistor 2SC3986 Driver Applications Applications · Suitable for use in switching of L load

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Power Transistors 2SC3980 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0

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Power Transistors 2SC3980 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0

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Ordering number:ENN2221B NPN Planar Silicon Darlington Transistor 2SC3987 Driver Applications www.datasheet4u.com Applications · Suitable for use i

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 800V RDS(on) (max) 45 IDSS (min) 100mA Package SOT-223 Features • High Breakdown Voltage: 800V • Low O

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Ordering number:EN2556 NPN Triple Diffused Planar Silicon Transistor 2SC3989 500V/25A Switching Regulator Applications Features · High breakdown vol

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Power Transistors 2SC3981, 2SC3981A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 800V RDS(on) (max) 380 IDSS (min) 20mA Package SOT-23 Features • High Breakdown Voltage: 800V •

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switc

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switc

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CPC3981Z 800V, 45Ω N-Channel MOSFET Key Attributes Characteristic V(BR)DSX TJ RDS(on) IDSS Rating 800 150 45 100 Unit V °C Ω mA Pinout Diagram (SO

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Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 20.0±0.5 Unit: mm φ 3.3

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