C3980 Datasheet | Specifications & PDF Download

Power Transistors 2SC3980 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0

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Power Transistors 2SC3980 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features (0.7) 15.0±0.3 11.0±0

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 800V RDS(on) (max) 45 IDSS (min) 100mA Package SOT-223 Features • High Breakdown Voltage: 800V • Low O

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min.) ·Wide Area of Safe Operation ·High Speed Switc

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 800V RDS(on) (max) 45 IDSS (min) 100mA Package SOT-223 Features • High Breakdown Voltage: 800V • Low O

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 800V RDS(on) (max) 45 IDSS (min) 100mA Package SOT-223 Features • High Breakdown Voltage: 800V • Low O

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Power Transistors 2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q

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