VDS 1200 V C3M0032120K ID @ 25˚C 63 A Silico.
C3M0032120K - Silicon Carbide Power MOSFET
C3M0032120K Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • Optimized pa.C3M0032120K1 - Silicon Carbide Power MOSFET
C3M0032120K1 Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • Optimized package with separate driver source pin • Lower profile TO.C3M0032120K - Silicon Carbide Power MOSFET
VDS 1200 V C3M0032120K ID @ 25˚C 63 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode .