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C3M0032120K - Silicon Carbide Power MOSFET

Key Features

  • Package.
  • 3rd generation SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system eff.

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C3M0032120K Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Motor Control • EV Battery Chargers • High Voltage DC/DC Converters Part Number C3M0032120K Package TO-247-4L Marking C3M0032120K Key Parameters Parameter Drain - Source V