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C3M0032120J2
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Features
• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• Larger drain tab for better thermal performance
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• •
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Benefits
• Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency
Applications • Motor Control • EV Battery Chargers • High Voltage DC/DC Converters
Package
Tab Drain
1234567
Drain (TAB)
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
Part Numb
C3M0032120J2 Datasheet
