C3M0032120J1 - Silicon Carbide Power MOSFET

Product Overview

CREE

Part number	C3M0032120J1
Manufacturer	CREE
File Size	958.45 KB
Description	Silicon Carbide Power MOSFET
Datasheet	C3M0032120J1 Datasheet
Additional preview pages of the C3M0032120J1 datasheet.

Package.
3rd generation SiC MOSFET technology.
Optimized package with separate driver source pin.
8mm of creepage distance between drain and source.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
Reduce switching losses and minimize gate ringing.
Higher system efficiency.

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Published: Dec 20, 2024 |