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VDS
1200 V
C3M0032120J1
ID @ 25˚C
68 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
32 mΩ
N-Channel Enhancement Mode
Features
Package
• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• •
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Benefits
• Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency
Applications
TAB Drain
1 2 34 5 6 7 G KS S S S S S
Drain (TAB)
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (P
C3M0032120J1 Datasheet
