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C3M0032120D - Silicon Carbide Power MOSFET

Key Features

  • Package.
  • 3rd generation SiC MOSFET technology.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.
  • Reduce cooling requirements.
  • Increase power density.
  • Increase system switching freque.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDS 1200 V C3M0032120D ID @ 25˚C 63 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 32 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Solar inverters • EV motor drive • High voltage DC/DC converters • Switched mode power supplies Part Number Package Marking C3M0032120D Maximum Ratings (TC = 25 ˚C unless otherw