| Part Number | C3M0032120D Datasheet |
|---|---|
| Manufacturer | Cree |
| Overview |
VDS 1200 V
C3M0032120D
ID @ 25˚C
63 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 32 mΩ
N-Channel Enhancement Mode
Features
Package
• 3rd generation SiC.
Package
* 3rd generation SiC MOSFET technology * High blocking voltage with low on-resistance * High-speed switching with low capacitances * * Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits * Reduce switching losses and minimize gate ringing . |