C3M0032120J1 Overview
Key Features
- 3rd generation Silicon Carbide (SiC) MOSFET technology
- Optimized package with separate driver source pin
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS compliant 1 234567 G DS S S S S S Gate (Pin
- Driver Source (Pin
