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C3M0032120J1
Silicon Carbide Power C3MTM MOSFET Technology
N-Channel Enhancement Mode
TAB
Drain
Drain
Features
(TAB)
• 3rd generation Silicon Carbide (SiC) MOSFET technology • Optimized package with separate driver source pin • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant
1 234567 G DS S S S S S
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
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