C3M0032120J1 Description
C3M0032120J1 Silicon Carbide Power C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Drain.
C3M0032120J1 Key Features
- 3rd generation Silicon Carbide (SiC) MOSFET technology
- Optimized package with separate driver source pin
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant