| Part Number | C3M0032120J1 Datasheet |
|---|---|
| Manufacturer | Wolfspeed |
| Overview |
C3M0032120J1
Silicon Carbide Power C3MTM MOSFET Technology
N-Channel Enhancement Mode
TAB
Drain
Drain
Features
(TAB)
• 3rd generation Silicon Carbide (SiC) MOSFET technology • Optimized packag.
(TAB)
* 3rd generation Silicon Carbide (SiC) MOSFET technology * Optimized package with separate driver source pin * High blocking voltage with low on-resistance * High-speed switching with low capacitances * Fast intrinsic diode with low reverse recovery (Qrr) * Halogen free, RoHS compliant 1 23. |
C3M0032120J1 Datasheet and Specifications PDF
The C3M0032120J1 is a Silicon Carbide Power MOSFET.
| Part Number | C3M0032120J1 Datasheet |
|---|---|
| Description | Silicon Carbide Power MOSFET |
| Manufacturer | Cree |
| Overview |
VDS
1200 V
C3M0032120J1
ID @ 25˚C
68 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
32 mΩ
N-Channel Enhancement Mode
Features
Package
• 3rd generation SiC MOSFET t.
Package
* 3rd generation SiC MOSFET technology * Optimized package with separate driver source pin * 8mm of creepage distance between drain and source * High blocking voltage with low on-resistance * High-speed switching with low capacitances * * Fast intrinsic diode with low reverse recover. |