| Part Number | C3M0032120K Datasheet |
|---|---|
| Manufacturer | Cree |
| Overview |
VDS
1200 V
C3M0032120K
ID @ 25˚C
63 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
32 mΩ
N-Channel Enhancement Mode
Features
Package
• 3rd generation SiC MOSFET te.
Package
* 3rd generation SiC MOSFET technology * Optimized package with separate driver source pin * 8mm of creepage distance between drain and source * High blocking voltage with low on-resistance * High-speed switching with low capacitances * * Fast intrinsic diode with low reverse recover. |