C3M0045065K Datasheet | Specifications & PDF Download

C3M0045065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features • C3MTM Silicon Carbide (Si

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VDS 650 V C3M0045065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 49 A 45 mΩ N-Channel Enhancement Mode Fea

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