C3M0065090D Silicon Carbide Power MOSFET C3MTM MOS.
C3M0065090D - Silicon Carbide Power MOSFET
VDS 900 V C3M0065090D ID @ 25˚C 36 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode .C3M0065090D - Silicon Carbide Power MOSFET
C3M0065090D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • C3M SiC MOSFET technology • High blocking volta.