C3M0120065D Silicon Carbide Power MOSFET C3MTM MOS.
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C3M0120065D - Silicon Carbide Power MOSFET
VDS 650 V C3M0120065D ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode .
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C3M0120065D - Silicon Carbide Power MOSFET
C3M0120065D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd Generation SiC MOSFET technology • High bl.