C3M0120065D Datasheet | Cree

Features Package - 3rd Generation Si C MOSFET technology - High blocking voltage with low on-resistance - High speed switching with low capacitances - Fast intrinsic diode with low reverse recovery (Qrr) - Halogen free, Ro HS pliant Benefits - Higher system efficiency - Reduced cooling requirements - Increased power density - Increased system switching frequency - Easy to parallel and simple to drive - Enable new hard switching PFC topologies (Totem-Pole) Applications - Solar inverters - DC/DC converters - Switch Mode Power Supplies - EV battery chargers - UPS Part Number C3M0120065D Package TO-247-3 Marking C3M0120065D Maximum Ratings Symbol Parameter VDSS VGS ID(pulse) PD TJ , Tstg TL Md Drain - Source Voltage, TC = 25 ˚C Gate - Source voltage (Under transient events < 100 ns) Continuous Drain Current, VGS = 15 V, TC = 25˚C Continuous Drain Current, VGS = 15 V, TC = 100˚C Pulsed Drain Current, Pulse width t P limited by Tjmax Power Dissipation, TC=25˚C, TJ = 175 ˚C Operating Junction and Storage Temperature Solder Temperature, 1.6mm (0.063”) from case for 10s Mounting Torque, (M3 or 6-32 screw) Value Unit Note 650 -8/+19 22 16 51 V V Fig. 29 A Fig. 19 A -40 to...