C3M0120065J
C3M0120065J is Silicon Carbide Power MOSFET manufactured by Wolfspeed.
Features
- 3rd Generation Si C MOSFET technology
- Low inductance package with driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, Ro HS pliant
Gate (Pin 1)
1234567 G KS S S S S S
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo.
Ordering Part Number Package
Marking
TO-263-7
Applications
- Solar inverters
- DC/DC converters
- Switch Mode Power Supplies
- EV battery chargers
- UPS
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
- Easy to parallel and simple to drive
- Enable new hard switching PFC topologies (Totem-Pole)
Key Parameters
Parameter Drain
- Source Voltage Maximum Gate
- Source Voltage Operational Gate-Source Voltage
DC Continuous Drain Current
Symbol VDS
VGS(max) VGS op
Min. -8
Pulsed Drain Current Power Dissipation Operating Junction and Storage Temperature Solder Temperature
IDM PD TJ, Tstg...
