C3M0120065J Overview
Key Specifications
Package: TO-263-7
Height: 4.82 mm
Max Operating Temp: 175 °C
Min Operating Temp: -40 °C
Key Features
- 3rd Generation SiC MOSFET technology
- Low inductance package with driver source pin
- 7mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High speed switching with low capacitances
