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C3M0120065K - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • Package.
  • C3MTM SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.
  • R.

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Datasheet Details

Part number C3M0120065K
Manufacturer Cree
File Size 1.02 MB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet C3M0120065K Datasheet
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VDS 650 V C3M0120065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 22 A 120 mΩ N-Channel Enhancement Mode Features Package • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Solar inverters • DC/DC converters • Switch Mode Power Supplies • EV battery chargers • UPS Part Number C3M0120065K
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