C3M0120065K Datasheet | Cree

Features Package - C3MTM Si C MOSFET technology - Optimized package with separate driver source pin - 8mm of creepage distance between drain and source - High blocking voltage with low on-resistance - High-speed switching with low capacitances - - Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, Ro HS pliant Benefits - Reduce switching losses and minimize gate ringing - Higher system efficiency - Reduce cooling requirements - Increase power density - Increase system switching frequency Applications - Solar inverters - DC/DC converters - Switch Mode Power Supplies - EV battery chargers - UPS Part Number C3M0120065K Drain (Pin 1, TAB) Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Package TO-247-4 Marking C3M0120065K Maximum Ratings Symbol Parameter VDSS VGS Drain - Source Voltage, TC = 25 ˚C Gate - Source voltage (Under transient events < 100 ns) Continuous Drain Current, VGS = 15 V, TC = 25˚C Continuous Drain Current, VGS = 15 V, TC = 100˚C ID(pulse) Pulsed Drain Current, Pulse width t P limited by Tjmax PD TJ , Tstg TL Md Power Dissipation, TC=25˚C, TJ = 175 ˚C Operating Junction and Storage Temperature Solder Temperature, 1.6mm (0.063”) from case for 10s Mounting Torque, (M3 or 6-32 screw) Value Unit...