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C3M0120065K - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • C3MTM SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Wolfspeed, Inc. is in the process of rebranding its products and related.

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Datasheet Details

Part number C3M0120065K
Manufacturer Wolfspeed
File Size 825.21 KB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet C3M0120065K Datasheet
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C3M0120065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo.
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