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C3M0120065L
Silicon Carbide Power MOSFET
C3MTM MOSFET Technology
N-Channel Enhancement Mode F eature s
• 3rd generation SiC MOSFET technology
• Optimized package with separate driver source pin
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• •
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Benefits
• Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency
Typical Applications • Datacenter Power Supplies • Telecom Power Supplies • Energy Storage Systems • Solar (PV) inverters • High Voltage DC/DC converters
Package
Orderable Part Number C3M0120065L-TR
Package TOLL
Marking C3M0120
C3M0120065L Datasheet
