C3M0120065D Datasheet and Specifications PDF

C3M0120065D Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Features • 3rd Generation SiC MOSFET technology • High blocking voltage with low on-resistance • High speed.

* 3rd Generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant Wolfspeed, Inc. is in the process of rebranding its products and related materials.

VDS 650 V C3M0120065D ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode Features Package • 3rd Generation SiC MOSFET te.

Package
* 3rd Generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant Benefits
* Higher system efficiency
* Reduced cooling requirements
* In.