C430 Datasheet | Specifications & PDF Download

Product Specification SPECIFICATION FOR APPROVAL LC430DUY ( ) Preliminary Specification ( ● ) Final Specification Title BUYER MODEL CHN 43.0” WUX

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NTMFS5C430N Power MOSFET 40 V, 1.7 mW, 185 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Condu

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XMC4300 Microcontroller Series for Industrial Applications XMC4000 Family ARM® Cortex®-M4 32-bit processor core Data Sheet V1.2 2023-04 Microcontrolle

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www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4304 DESCRIPTION ·With TO-220F package ·High voltag

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DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 40 V, 1.4 mW, 200 A V(BR)DSS 40 V RDS(ON) MAX 1.4 mW @ 10 V 2.2 mW @ 4.5 V ID MAX 200 A

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DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, DFN5/DFNW5 40 V, 1.7 mW, 185 A NVMFS5C430N V(BR)DSS 40 V RDS(ON) MAX 1.7 mW @ 10 V ID

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Product Specification SPECIFICATION FOR APPROVAL www.gotolcd.com LC430DUE ( ) Preliminary Specification ( ● ) Final Specification Title BUYER MODEL

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www.DataSheet4U.com 2SC4300 Application : Switching Regulator and General Purpose (Ta=25°C) 2SC4300 100max 100max 800min 10 to 30 0.5max 1.2max 6typ

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Product Folder Order Now Technical Documents Tools & Software Support & Community CC430F6147, CC430F6145, CC430F6143 CC430F5147, CC430F5145, CC43

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Features n Bidirectional Buffer for SDA and SCL Lines Increases Fanout n Prevents SDA and SCL Corruption During Live Board Insertion and Removal From

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Features n Bidirectional Buffer* for SDA and SCL Lines Increases Fanout n Prevents SDA and SCL Corruption During Live Board Insertion and Removal From

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NTMFS5C430NL Power MOSFET 40 V, 1.5 mW, 200 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Cond

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U U FEATURES ■ Automatic Disconnect of SDA/SCL Lines when Bus is Stuck Low for ≥ 30ms ■ Recovers Stuck Busses with Automatic Clocking* ■ Bidirectiona

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4301 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switch

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2SC4300 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC

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