C484 Datasheet | Specifications & PDF Download

PI6LC4840 Crystal to LVDS/LVCMOS Frequency Synthesizer Features ÎÎ3.3V supply voltage ± 5% ÎÎThree banks of outputs: àà Bank A: 3 25/50MHz pin select

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 2SC4842 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, hi

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com

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Freescale Dual N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and

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Type DCMC 85 °C High Capacitance, Screw Terminal, Aluminum Highest Capacitance Screw Terminal Type With more capacitance and often more ripple-current

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CDX-C4850R Part Number - CDX-C4850R Manufacture - Sony Description - FM/MW/LW COMPACT DISC PLAYER SERVICE MANUAL http://www.promelec.ru/UPLOAD/xml/sch

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4842 2SC4842 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, hi

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4843 2SC4843 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, hi

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3-865-874-12 (1) FM/MW/LW Compact Disc Player Operating Instructions Manual de instrucciones Manual de instruções Bruksanvisning GB ES PT SE For in

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 2SC4841 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, hi

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 2SC4841 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, hi

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4840 2SC4840 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, hi

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4844 2SC4844 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, hi

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4849 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·Collect

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MICROWAVE CORPORATION v01.0404 HMC484MS8G GaAs MMIC 10 WATT T/R SWITCH DC - 3.0 GHz Features High RF Power Handling: > +40 dBm High Third Order Inte

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4848 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max)@ IC= 5A ·Collect

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4840 2SC4840 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, hi

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4844 2SC4844 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure, hi

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4847 DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage-

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Freescale Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power

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