Power Transistors 2SC4953 Silicon NPN triple diffu.
FUMAN ELECTRONICS
11
TC4953 - 20V P-channel enhanced MOS FET
1 4 2 5 3 6 D SHENZHEN FUMAN ELECTRONICS CO., LTD. TC4953 (：S&CIC0750) 20V P MOS D VDS= -20V RDS(ON), [email protected], Ids@-3A = 62mΩ@TYP RDS(.
Semtron
2
SMC4953A - Dual P-Channel Enhancement Mode MOSFET
Dual P-Channel Fast Switching MOSFETs SMC4953A -30V Dual P-Channel Fast Switching MOSFETs ■DESCRIPTION ■FEATURE The SMC4953A is the Dual P-Channe.
Panasonic
2
C4953 - 2SC4953
Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2.
FUMAN ELECTRONICS
2
TC4953ES - 11V P-channel enhanced dual MOSFET
SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (：S&CIC1647) 11V P MOS VDS= -10V RDS(ON), [email protected], Ids@-3A = 85mΩ@TYP RDS(ON), Vgs@-2.
INCHANGE
2
2SC4953 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4953 DESCRIPTION ·Silicon NPN triple diffusion planar type ·High Speed Switching ·100% av.
Panasonic Semiconductor
1
2SC4953 - NPN Transistor
Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2.
MORESEMI
1
MSC4953W - Dual P-Channel MOSFET
MSC4953W -30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ.
Excelics Semiconductor
1
EIC4953-8 - Internally Matched Power FET
www.DataSheet4U.com EIC4953-8 ISSUED 02/28/2008 4.90-5.30 GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • 4.90–5.30GHz Bandwidth Inp.