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TC4953ES Datasheet - FUMAN ELECTRONICS

TC4953ES 11V P-channel enhanced dual MOSFET

SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (：S&CIC1647) 11V P MOS VDS= -10V RDS(ON), Vgs@-4.5V, Ids@-3A = 85mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-3A = 110mΩ@TYP CMOS ESD ，HBM>6kV ，Vgs(th)=-0.6V (TA = 25℃，) ：：。 VDS1 VDS2 VGS VDS1 ID1 ID2 TJ, Tstg www.superchip.cn 13 -10 -10 -5 -10 -3 -3 -50 to 150 V A ℃ Version 1.1 SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (：S&CIC1647) 11V P MOS BVDSS1 VGS = 0V,.

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Datasheet Details

Part number:

TC4953ES

Manufacturer:

FUMAN ELECTRONICS

File Size:

164.00 KB

Description:

11v p-channel enhanced dual mosfet.

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TC4953ES TC4953ES 11V P-channel enhanced dual MOSFET FUMAN ELECTRONICS

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