| Part Number | Description | Manufacture |
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N-Channel MOSFET ■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free product is acquired ■SOT-23 Package ■Marking Code: A2SHB Case Material: Molded Plastic. UL Flammability Classification Rat |
 HAOHAI |
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P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -2.6A RDS(ON) 160mΩ @ VGS=-2.5V RDS(ON) 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● P |
 Bruckewell |
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N&P-Channel MOSFET |
 UNIKC |
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Single channel constant current LED control chip |
 REACTOR |
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N-Channel MOSFET LIMITS ±20 12 9 48 8 3.2 1.6 21 8.3 2.5 1 ‐55 to 150 UNIT V A mJ W W °C MAXIMUM 6 50 UNIT °C / W p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMB20N03V |
 Excelliance MOS |
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N-Channel MOSFET Transistor ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters |
 INCHANGE |
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4.8W single channel Class-F audio power amplifier 89509090 MIX2018 4.8W F （ESOP8） WELLKING TECHNOLOGIES CO.,LTD 4/4 TEL:0755-83611411 FAX:0755-89509090 |
 WELLKING TECHNOLOGIES |
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P-Channel Enhancement Mode Power MOSFET VDS = -30V,ID = -4.2A RDS(ON) 130mΩ @ VGS=-2.5V RDS(ON) 75mΩ @ VGS=-4.5V RDS(ON) 55mΩ @ VGS=-10V High power and current handing capability Lead free product is acquired Surface mount package Application PWM applications Load switch Power manage |
 Rectron |
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N-Channel MOSFET Transistor ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide vari |
 Inchange Semiconductor |
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N-CHANNEL POWER MOSFET TRANSISTOR 12 3 TO-252/DPAK * RDS(ON) = 23mȍ@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability SYMBOL U |
 Thinki Semiconductor |
| Total 66411 results |
