A1SHB - P-Channel Enhancement Mode Power MOSFET

Bruckewell

Datasheet Details

The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Marking and pin assignment Application.
PWM.

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