A1SHB P-Channel Enhancement Mode Power MOSFET

Bruckewell

Description

MS23P01S P-Channel Enhancement Mode Power MOSFET .
The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: A1SHB
Manufacturer: Bruckewell
File Size: 385.32 KB
Datasheet: A1SHB-Bruckewell.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram
* High power and current handing capability
* Lead free product is acquired

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A1SHB P-Channel Enhancement Mode Power MOSFET Bruckewell

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