CS150N03
Description
： CS150N03 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75n C) l Low Reverse transfer capacitances(Typical:800p F) l 100% Single Pulse avalanche energy Test
Applications：
UPS,Inverter,Lighting.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
IDMa1 VGS EAS a2 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage...
