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CS150N03, CS150N03A8 Datasheet - Huajing

CS150N03 Silicon N-Channel Power MOSFET

CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

CS150N03 Features

* l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 V

CS150N03A8-Huajing.pdf

This datasheet PDF includes multiple part numbers: CS150N03, CS150N03A8. Please refer to the document for exact specifications by model.
CS150N03 Datasheet Preview Page 2 CS150N03 Datasheet Preview Page 3

Datasheet Details

Part number:

CS150N03, CS150N03A8

Manufacturer:

Huajing

File Size:

508.37 KB

Description:

Silicon n-channel power mosfet.

Note:

This datasheet PDF includes multiple part numbers: CS150N03, CS150N03A8.
Please refer to the document for exact specifications by model.

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CS150N03 CS150N03A8 Silicon N-Channel Power MOSFET Huajing

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