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Silicon N-Channel Power MOSFET
○R
CS150N03 D8
General Description：
CS150N03 D8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃)
RDS(ON)Typ
30 150 120 104 1.9
V A A W mΩ
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤2.5mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:482pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS150N03D8 Datasheet
