CS150N03D8
Overview
： CS150N03 D8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) RDS(ON)Typ 30 150 120 104 1.9 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher efficiency.
