CS150N03D8 Datasheet PDF

Huajing CS150N03D8

The transistor VDSS ID（Silicon limited current） ID（Package limited current） PD(TC=25℃) RDS(ON)Typ 30 150 120 104 1.9 V A A W mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard.

Part No.	CS150N03D8
Datasheet	CS150N03D8 Download
Manufacturer	Huajing
Description	Silicon N-Channel Power MOSFET
Buy	Stock & Price

GENERAL DESCRIPTION

： CS150N03 D8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

FEATURES

： l Fast Switching l Low ON Resistance(Rdson≤2.5mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:482pF) l 100% Single Pulse avalanche energy Test

APPLICATIONS

： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Rating 30 150 96 600 ±20 1000 104 0.832 150，–55 to 150 300 Units V A A A V mJ W W/℃ ℃ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD.