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CS150N03 - Silicon N-Channel Power MOSFET

Download the CS150N03 datasheet PDF. This datasheet also covers the CS150N03A8 variant, as both devices belong to the same silicon n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CS150N03A8-Huajing.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CS150N03
Manufacturer Huajing
File Size 508.37 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS150N03 Datasheet

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Other Datasheets by Huajing

Part Number Description
CS150N03A8 Silicon N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤3.5mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,Inverter,Lighting.