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PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally

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PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally

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LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA PERFORMANCES POUT = 20 W E

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LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA: 865-895 MHz / 28 V P

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www.DataSheet4U.com ZL50021 Enhanced 4 K Digital Switch with Stratum 3 DPLL Data Sheet Features • 4096-channel x 4096-channel non-blocking digital Ti

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www.DataSheet4U.com HT66F20/HT66F30/HT66F40/HT66F50/HT66F60 HT66FU30/HT66FU40/HT66FU50/HT66FU60 Enhanced A/D Flash Type MCU 8-Bit MCU with EEPROM Tec

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3401 RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP P MOS 1   SOT-23 D Drain D 3 k 1 2 e G S

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D Direct Upgrades to TL07x and TL08x BiFET Operational Amplifiers D Faster Slew Rate (20 V/µs Typ) Without Increased Power Consumption TL05x, TL05xA

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+0 1 ) General Description： HM20N65F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce t

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+0 1 ) General Description： HM16N60F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce t

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FINAL Am85C30 Enhanced Serial Communications Controller DISTINCTIVE CHARACTERISTICS s Fastest data rate of any Am8530 — 8.192 MHz / 2.048 Mb/s — 10 M

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LET21004 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELL

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LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABIL

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LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON

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LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL

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LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL

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LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL

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KV1913A thru GC1310 MICROWAVE PRODUCTS DIVISION ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES PRODUCT PREVIEW DESCRIPTION KEY FEATURES

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