C4D20120D Datasheet | Specifications & PDF Download

C4D20120D 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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C4D20120D Silicon Carbide Schottky Diode VRRM = IF; TC<135˚C 1200 V = 32 A 132 nC Z-Rec™ Rectifier Features Qc = • • • • • 1.2-KVo

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