C4D20120D Overview
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved...
C4D20120D Key Features
- High-Frequency Operation
- Zero Reverse Recovery Current / Forward
- Temperature-Independent Switching Behavior
- Parallel Devices Without Thermal Runaway
