| Part Number | C4D20120D Datasheet |
|---|---|
| Manufacturer | Wolfspeed |
| Overview |
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching.
* High-Frequency Operation * Zero Reverse Recovery Current / Forward Recovery Voltage * Temperature-Independent Switching Behavior * Parallel Devices Without Thermal Runaway Typical Applications * Boost Diodes in PFC or DC/DC Stages * Free Wheeling Diodes in Inverter Stages * Switch Mode Power Supp. |
C4D20120D Datasheet and Specifications PDF
The C4D20120D is a 20A Silicon Carbide Schottky Diode.
Key Specifications
| Package | TO-247-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 25.5 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | C4D20120D Datasheet |
|---|---|
| Description | Silicon Carbide Schottky Diode |
| Manufacturer | Cree |
| Overview |
C4D20120D
Silicon Carbide Schottky Diode
VRRM = IF;
TC<135˚C
1200 V = 32 A 132 nC
Z-Rec™ Rectifier
Features
Qc =
• • • • •
1.2-KVolt Schottky Rectifier Zero Reverse Recovery Curren.
Qc =
* * * * * 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits * * * * * Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher E. |