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C4D20120A - Silicon Carbide Schottky Diode

Key Features

  • VRRM = 1200 V IF = 20 A Qc =130 nC Package.
  • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching TO-220-2 PIN 1 PIN 2 Benefits.
  • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runawa.

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Full PDF Text Transcription for C4D20120A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for C4D20120A. For precise diagrams, tables, and layout, please refer to the original PDF.

C4D20120A–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = 1200 V IF = 20 A Qc =130 nC Package • • • • • 1....

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C Package • • • • • 1.