C4D20120H Overview
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved...
C4D20120H Key Features
- Low Forward Voltage (VF) Drop with Positive
- Zero Reverse Recovery Current / Forward
- Temperature-Independent Switching Behavior
C4D20120H Applications
- Low Forward Voltage (VF) Drop with Positive
