The C4D20120H is a 20A Silicon Carbide Schottky Diode.
| Package | TO-247-2 |
|---|---|
| Height | 25.96 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | C4D20120H Datasheet |
|---|---|
| Manufacturer | Wolfspeed |
| Overview |
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching.
* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient * Zero Reverse Recovery Current / Forward Recovery Voltage * Temperature-Independent Switching Behavior Typical Applications * Industrial Switched Mode Power Supplies * Uninterruptible & AUX Power Supplies * Boost for PFC & DC-DC. |
| Part Number | C4D20120H Datasheet |
|---|---|
| Description | Silicon Carbide Schottky Diode |
| Manufacturer | Cree |
| Overview |
C4D20120H
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
• 1.2kV Schottky Rectifier
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching
•.
* 1.2kV Schottky Rectifier * Zero Reverse Recovery Current * High-Frequency Operation * Temperature-Independent Switching * Extremely Fast Switching * * Positive Temperature Coefficient on VF Increased Creepage/Clearance Distance Benefits * Replace Bipolar with Unipolar Rectifiers *. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Chip One Stop | 221 | 1+ : 8.26 USD 5+ : 7.9 USD 10+ : 7.82 USD 50+ : 1390 JPY |
View Offer |
| DigiKey | 193 | 1+ : 17.72 USD 30+ : 10.94133 USD 120+ : 9.45733 USD 510+ : 8.76251 USD |
View Offer |
| Richardson RFPD | -3 | 450+ : 8.69 USD | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| C4D20120D | Wolfspeed | 20A Silicon Carbide Schottky Diode |
| C4D20120A | Cree | Silicon Carbide Schottky Diode |
| C4D20120D | Cree | Silicon Carbide Schottky Diode |