C4D30120D Datasheet | Specifications & PDF Download

C4D30120D–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = IF; TC<135˚C 1200 V = 43 A 192 nC Qc = Package • • • • •

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C4D30120D 4th Generation 1200 V, 30 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

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Wuxi Gwok Semiconductor Co.,Ltd GC4D30120D Silicon Carbide Schottky Diode Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High

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