C5198 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (mi

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www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5198 DESCRIPTION ·With TO-3P(I) package ·Comple

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS A1941 C5198 (9TW) (9TW) PNP NPN TO-

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to T

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SEMICONDUCTOR 2SC5198B Series Silicon NPN triple diffusion planar transistor 10A/140V/100W RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0

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NPN Silicon NPN Triple Diffused Transistor R 2SC5198 VCEO=140V (min) 2SA1941 70W RoHS APPLICATIONS Power Amplifier Applications FEATURES High collec

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2SC5198 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-3P NPN 。Silicon NPN transistor in a TO-3P Plastic Package.  / Features 70W ， 2SA1941 。

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (mi

Rating: 1 ★ (1 votes)