C536 Datasheet | Specifications & PDF Download

2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5360 Color TV Chroma Output Applications 2SC5360 Unit: mm • High voltage: VCEO = 300 V • Smal

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INTEGRATED CIRCUITS 89C536/89C538 80C51 8-bit microcontroller family 16K/64K/512 FLASH Preliminary specification Supersedes data of 1997 Dec 02 IC20

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2SC536 2SC536 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current

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ST 2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  5.0W Power Dissipation  3.3V – 200V Nominal Zener Voltage  5% Standard Vz Toler

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MIC5365/6 High-Performance Single 150 mA LDO Features • 2.5V to 5.5V Input Voltage Range • 150 mA Guaranteed Output Current • Stable with 1 µF Cerami

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2SC536 2SC536 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-92 1. EMITTER 400 mW (Tamb=25℃) 2. COLLECTOR 3. BASE 1 2 3 Collector current

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CDC536 www.ti.com SCAS378G – APRIL 1994 – REVISED JULY 2004 3.3-V PHASE-LOCK LOOP CLOCK DRIVER WITH 3-STATE OUTPUTS FEATURES • Low-Output Skew for

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MIC5365/6 High-Performance Single 150 mA LDO Features • 2.5V to 5.5V Input Voltage Range • 150 mA Guaranteed Output Current • Stable with 1 µF Cerami

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® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  5.0W Power Dissipation  3.3V – 200V Nominal Zener Voltage  5% Standard Vz Toler

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1SMC5333B - 1SMC5388B SURFACE MOUNT SILICON ZENER DIODES VOLTAGE RANGE: 3.3 - 200V POWER: 5.0Wa t t s Features Complete Voltage Range 3.3 to 200 Vo

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1PGSMC5348 - 1PGSMC5369 Taiwan Semiconductor 5W, 11V - 51V Surface Mount Silicon Zener Diode FEATURES ● Photo Glass passivated junction ● Low profil

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Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 s Features q q q 0.

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2SC536 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G

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Product Brief MPC535PB/D Rev. 0, 2/2003 MPC535/MPC536 Product Brief Freescale Semiconductor, Inc. Freescale Semiconductor, Inc This document pro

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES • High f T 14 GHz TYP. • Hi

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC536 FEATURES Power dissipation PCM: 400 mW (Tamb=25℃) 1.

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