CEB16N10L-VB CEB16N10L-VB Datasheet N-Channel 100-.
CET
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CEB16N10L - N-Channel MOSFET
CEP16N10L/CEB16N10L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125m.
VBsemi
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CEB16N10L - N-Channel MOSFET
CEB16N10L-VB CEB16N10L-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.100 at VGS = 10 V.