CEB75N06 Datasheet | Specifications & PDF Download

N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON

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CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for

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