CEK01N6 N-Channel Enhancement Mode Field Effect Tr.
CET
CEK01N6 - N-Channel MOSFET
CEK01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for extremely low R.
CET
CEK01N65 - N-Channel Enhancement Mode Field Effect Transistor
www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for .
CET
CEK01N65A - N-Channel Enhancement Mode Field Effect Transistor
www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for ext.
CET
CEK01N6G - N-Channel Enhancement Mode Field Effect Transistor
www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. High dense cell design for extr.
