CEK01N6 Datasheet | Specifications & PDF Download

CEK01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for extremely low R

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www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for

(10 views)

www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for ext

(8 views)

www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. High dense cell design for extr

(5 views)