P-Channel Enhancement Mode Field Effect Transistor.
Chino-Excel Technology
CES2307 - P-Channel MOSFET
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dense cell des.
CET
CES2307A - P-Channel MOSFET
CES2307A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dens.
