CES2309 P-Channel Enhancement Mode Field Effect Tr.
Chino-Excel Technology
CES2309 - P-Channel MOSFET
CES2309 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V. High dens.
